冠禹 MOSFET

30V/30A,RDS=10mΩ(Typ.)@VGS=10VRDS=15mΩ(Typ.)@VGS=4.5VExcellent QG x RDS(on) product(FOM) SGT Technology Fast Switching Spee100% avalanche tested

N-Channel30V/7A,RDS=19mΩ(Typ.) @ VGS=10V，RDS=27mΩ(Typ.) @ VGS=4.5VPChannel，-30V/-5ARDS=38mΩ (Typ.) @ VGS=-10V，RDS (ON) =53mΩ (Typ.) @ VGS=-4.5V，Optimized Gate Charge to Minimize Switching Losses，Low Capacitance to Minimize Driver Losses

-60V/-2A,RDS=150mΩ(Typ.)@VGS=-10VRDS=210mΩ(Typ.)@VGS=-4.5V，Low RDS，Super High Dense Cell Design，Reliable and Rugged

20V/3A,RDS=43mΩ(Typ.)@VGS=4.5V,RDS=55mΩ(Typ.)@VGS=2.5V,Low RDS (ON),Super High Dense Cell D

40V/200A,Low RDS (ON)，Planar Technology，Reliable and Rugged Synchronous Rectification, High efficiency DC/DC Converters