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Trench MOSFET P沟道
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Trench MOSFET N沟道
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N-Channel30V/7A,RDS=19mΩ(Typ.) @ VGS=10V，RDS=27mΩ(Typ.) @ VGS=4.5VPChannel，-30V/-5ARDS=38mΩ (Typ.) @ VGS=-10V，RDS (ON) =53mΩ (Typ.) @ VGS=-4.5V，Optimized Gate Charge to Minimize Switching Losses，Low Capacitance to Minimize Driver Losses
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Super Trench MOSFET
30V/30A,RDS=10mΩ(Typ.)@VGS=10VRDS=15mΩ(Typ.)@VGS=4.5VExcellent QG x RDS(on) product(FOM) SGT Technology Fast Switching Spee100% avalanche tested
