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Trench MOSFET N+P沟道
N-Channel30V/7A,RDS=19mΩ(Typ.) @ VGS=10V，RDS=27mΩ(Typ.) @ VGS=4.5VPChannel，-30V/-5ARDS=38mΩ (Typ.) @ VGS=-10V，RDS (ON) =53mΩ (Typ.) @ VGS=-4.5V，Optimized Gate Charge to Minimize Switching Losses，Low Capacitance to Minimize Driver Losses
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Planar MOSFET
40V/200A,Low RDS (ON)，Planar Technology，Reliable and Rugged Synchronous Rectification, High efficiency DC/DC Converters
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Super Trench MOSFET
30V/30A,RDS=10mΩ(Typ.)@VGS=10VRDS=15mΩ(Typ.)@VGS=4.5VExcellent QG x RDS(on) product(FOM) SGT Technology Fast Switching Spee100% avalanche tested
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Trench MOSFET N沟道
20V/3A,RDS=43mΩ(Typ.)@VGS=4.5V,RDS=55mΩ(Typ.)@VGS=2.5V,Low RDS (ON),Super High Dense Cell D
